Design of K-Band Power Amplifier with 180-Degree Phase- Shift Function Using Low-Power CMOS Process

In this study, a K-band complementary metal oxide semiconductor (CMOS) power amplifier was designed using low-power (LP) process to improve the integration of beamforming system. order reduce overall system size, 180° phase-shift function mounted. It in four-stage structure secure sufficient gain. addition, we propose way wideband characteristics by utilizing gains each four stages. The with 40-nm LP CMOS verify feasibility proposed technique. measured P1dB for 0° and modes were 15.25 dBm 14.30 dBm, respectively, at operating frequency 25.0 GHz. phase difference between two 217°